* 바카라 양방 배팅/eSSC SEMINAR *

normal바카라 양방 배팅 style=mso-bidi-font-weight:normalPackaging of High Power LEDsline-height:200%

mso-fareast-language:KO

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Speaker : 신무환 박사[style=font-size:12pt; line-height:200%;Semiconductor 바카라 양방 배팅 Design
Lab]

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Location : 물리학과 세미나실 (공학3동 201호)

》》Date
& Time : 1월 24일(수) 오후 15:30 ~ 17:00

lang=EN-USElang=EN-US style=font-size:12pt;ffective 바카라 양방 배팅 management in high power LEDs is still one of
critical issues for the realization of the devices for general illumination and
other applications which require high power operation. A great portion, more
than 80 %, of the drive input power to operate GaN-based LEDs is consumed in
generating phonons rather than photons. In this paperstyle=font-size:12pt; mso-fareast-font-family:바탕;mso-fareast-language:KO,lang=EN-US style=font-size:12pt; 바카라 양방 배팅 packaging schemes바탕;mso-fareast-language:KO will be discussedlang=EN-US style=font-size:12pt; from the
package level to system level. In particular, style=font-size:12pt; mso-fareast-font-family:바탕;mso-fareast-language:KOceramic packages
with different paths of 바카라 양방 배팅 dissipation were designed by using 바카라 양방 배팅
simulator which utilizes finite volume method. It was shown that the 바카라 양방 배팅
characteristics of the LED packages were strongly affected by the contact area
of 바카라 양방 배팅 via in contact with LED chip rather than that in contact with the
ceramic mold. Multi-chip schemes are also analyzed for 바카라 양방 배팅ly efficient LED
packaging design.