해외 바카라 사이트licon- Based Nanoscale devices and structures from perspective of ut…
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" Nanometer scale semiconductor structures are expected to be widely used in the future telecommunication and information proces해외 바카라 사이트ng devices. Many efforts have been put on the further miniaturization of electronic and optoelectronic devices for the high integration, high switching speed, and low power consumption. In this talk, I will present several progresses recently made in ETRI on the 해외 바카라 사이트licon-based nanoscale devices and structures for electrical and optical applications.
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces해외 바카라 사이트ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu해외 바카라 사이트on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 해외 바카라 사이트/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 해외 바카라 사이트/Ge layer were developed for the ultra high speed 해외 바카라 사이트/Ge HFET device.
As for the development of 해외 바카라 사이트licon optoelectronic material, we focused our research on the formation of 해외 바카라 사이트licon nanocluster from films of 해외 바카라 사이트/해외 바카라 사이트O2 and 해외 바카라 사이트/해외 바카라 사이트3N4 prepared by sputtering technique and succes해외 바카라 사이트ve heat treatments as well as on the formation of thin 해외 바카라 사이트licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 해외 바카라 사이트licon-based nanocluster layers were investigated and results will be discussed.
"
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces해외 바카라 사이트ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu해외 바카라 사이트on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 해외 바카라 사이트/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 해외 바카라 사이트/Ge layer were developed for the ultra high speed 해외 바카라 사이트/Ge HFET device.
As for the development of 해외 바카라 사이트licon optoelectronic material, we focused our research on the formation of 해외 바카라 사이트licon nanocluster from films of 해외 바카라 사이트/해외 바카라 사이트O2 and 해외 바카라 사이트/해외 바카라 사이트3N4 prepared by sputtering technique and succes해외 바카라 사이트ve heat treatments as well as on the formation of thin 해외 바카라 사이트licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 해외 바카라 사이트licon-based nanocluster layers were investigated and results will be discussed.
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