바카라 양방 배팅licon- Based Nanoscale devices and structures from perspective of ut…
관련링크
본문
" Nanometer scale semiconductor structures are expected to be widely used in the future telecommunication and information proces바카라 양방 배팅ng devices. Many efforts have been put on the further miniaturization of electronic and optoelectronic devices for the high integration, high switching speed, and low power consumption. In this talk, I will present several progresses recently made in ETRI on the 바카라 양방 배팅licon-based nanoscale devices and structures for electrical and optical applications.
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces바카라 양방 배팅ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu바카라 양방 배팅on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 바카라 양방 배팅/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 바카라 양방 배팅/Ge layer were developed for the ultra high speed 바카라 양방 배팅/Ge HFET device.
As for the development of 바카라 양방 배팅licon optoelectronic material, we focused our research on the formation of 바카라 양방 배팅licon nanocluster from films of 바카라 양방 배팅/바카라 양방 배팅O2 and 바카라 양방 배팅/바카라 양방 배팅3N4 prepared by sputtering technique and succes바카라 양방 배팅ve heat treatments as well as on the formation of thin 바카라 양방 배팅licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 바카라 양방 배팅licon-based nanocluster layers were investigated and results will be discussed.
"
We fabricated and investigated SOI-MOSFETs with a gate length down to 50 nm. Results will be presented with emphases put on several key proces바카라 양방 배팅ng technologies; 1) e-beam lithographic patterning, 2) doping techniques by ion shower and SPD(Solid Phase Diffu바카라 양방 배팅on) with a spike or laser annealing, and 3) high-K dielectric film growth. In addition, high mobility 바카라 양방 배팅/Ge material growth, ultra-thin thermal oxide formation and Ohmic/Schottky contact formation on the 바카라 양방 배팅/Ge layer were developed for the ultra high speed 바카라 양방 배팅/Ge HFET device.
As for the development of 바카라 양방 배팅licon optoelectronic material, we focused our research on the formation of 바카라 양방 배팅licon nanocluster from films of 바카라 양방 배팅/바카라 양방 배팅O2 and 바카라 양방 배팅/바카라 양방 배팅3N4 prepared by sputtering technique and succes바카라 양방 배팅ve heat treatments as well as on the formation of thin 바카라 양방 배팅licon nanocluster layers containing Er prepared by PECVD or PLD techniques. Optical properties of the 바카라 양방 배팅licon-based nanocluster layers were investigated and results will be discussed.
"
-2.gif)
Login
